agilent AMMC-6140 20 C 40 ghz output x2 active frequency multiplier data sheet description agilents AMMC-6140 is an easy-to-use x2 active frequency multiplier mmic designed for commercial communication systems. the mmic takes a 10 to 20 ghz input signal and doubles it to 20 to 40 ghz. it could also be used between 9C10 ghz and 20C22 ghz with slight degrada- tion in conversion loss or fundamental suppression. it has an integrated matching, har- monic suppression, and bias network. the input/output are matched to 50 ? and fully dc blocked. the mmic is fabricated using phemt technology. the backside of this die is both rf and dc ground. this helps simplify the assembly process and reduces assembly-related performance variations and costs. this mmic is a cost effec- tive alternative to bulky hybrid fet and diode doublers that require high input drive levels, have high conversion loss and poor fundamental suppression. features ? input frequency range: 10 C 20 ghz ? broad input power range: -9 to +7 dbm ? output power: -1 to 0 dbm (pin = +4 db) ? fundamental suppression of 25 dbc ? 50 ? input and output match ? supply bias of -1.2v, 4.5v and 27 ma applications ? microwave radio systems ? satellite vsat, dbs up/down link ? lmds & pt-pt mmw long haul ? broadband wireless access (including 802.16 and 802.20 wimax) ? wll and mmds loops ? commercial grade military absolute maximum ratings [1] symbol parameters/conditions units min. max. v d positive drain voltage v 7 v g gate supply voltage v -3.0 0.5 i d drain current ma -3 p in cw input power dbm 15 t ch operating channel temperature c +150 t stg storage case temperature c -65 +150 t max maximum assembly temp (60 sec max) c +300 note: 1. operation in excess of any one of these conditions may result in permanent damage to this device. chip size: 1300 x 900 m (64 x 40 mils) chip size tolerance: 10 m ( 0.4 mils) chip thickness: 100 10 m (4 0.4 mils) pad dimensions: 120 x 80 m (5x3 0.4 mils) attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class a) esd human body model (class 0) refer to agilent application note a004r: electrostatic discharge damage and control.
2 AMMC-6140 dc specifications/physical properties [1] symbol parameters and test conditions units min. typ. max. i d drain supply current (under any rf power drive and temperature) (v d = 4.5v) ma 27 40 v g gate supply operating voltage v -1.5 -1.2 -1.0 ch-b thermal resistance [2] (backside temp. t b = 25 c) c/w 25 notes: 1. ambient operational temperature t a =25 c unless otherwise noted. 2. channel-to-backside thermal resistance ( ch-b ) = 26 c/w at t channel (t c ) = 34 c as measured using infrared microscopy. thermal resistance at backside temperature (t b ) = 25 c calculated from measured data. rf specifications [3, 4, 5] (t a = 25 c, v d = 4.5 v, i d(q) = 27 ma, z 0 = 50 ? ) symbol parameters and test conditions units minimum typical sigma fin input frequency ghz 10 to 20 fout output frequency ghz 20 to 40 po output power [6] dbm -2 -1 0.4 fo fundamental isolation (referenced to po): 20 C 36 ghz dbc 20 30 5.0 36 C 40 ghz dbc 14 16 1.0 3fo 3 rd harmonic isolation (referenced to po) dbc 25 1.2 p -1db output power at 1db gain compression dbm +5 rlin input return loss [6] db -15 rlout output return loss [6] db -10 ssb single sideband phase noise (100 khz offset) dbc/hz -135 notes: 3. small/large signal data measured in wafer form t a = 25 c. 4. 100% on-wafer rf test is done at pin = +4 dbm and output frequency = 20, 28, 36 and 40 ghz. 5. specifications are derived from measurements in a 50 ? test environment. aspects of the multiplier performance may be improved over a narrower bandwidth by application of additional matching. 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 typical distribution of pout, 2 nd harmonic and 3 rd harmonic suppression (fin=14 ghz). based on 2500 parts sampled over several production lots. 2fo pout (dbm) @ 28g hz fo suppression (dbm) @ 14 ghz 3fo suppression (dbm) @ 42 ghz -2 -1
3 figure 1. typical output power against fundamental, 3 rd , and 4 th harmonic suppression (p in =3 dbm) vs. frequency. output frequency (ghz) pout (dbm) 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 16 44 28 24 20 32 36 40 o/p freq=2*fin fundamental 3h 4h figure 2. typical output power at different fundamental input power vs. frequency. output frequency (ghz) pout (dbm) 2 0 -2 -4 -6 -8 -10 16 44 28 24 20 32 36 40 pin=-2 dbm pin=0 dbm pin=+2 dbm pin=+4 dbm pin=+5 dbm figure 3. typical input & output return loss. frequency (ghz) return loss (db) 0 -5 -10 -15 -20 -25 -30 444 20 12 28 36 s11 s22 figure 4. typical output power against fundamental 3 rd and 4 th harmonic suppression vs. p in (2h=22 ghz). pin (dbm) pout (dbm) 5 -5 -15 -25 -35 -45 -55 -11 5 -5 -7 -9 -3 -1 1 3 2h=22 ghz 3h 4h fin figure 5. typical output power against fundamental and 3 rd harmonic vs. p in (2h=30 ghz). pin (dbm) pout (dbm) 5 -5 -15 -25 -35 -45 -55 -11 5 -5 -7 -9 -3 -1 1 3 2h=30 ghz 3h fin figure 6. typical output power against fundamental vs. p in (2h=38 ghz). pin (dbm) pout (dbm) 5 -5 -15 -25 -35 -45 -55 -11 5 -5 -7 -9 -3 -1 1 3 2h=38 ghz fin figure 7. typical output power and fundamental suppression vs. temperature. output frequency (ghz) pout (dbm) 5 0 -5 -10 -15 -20 -25 -30 -35 -40 16 44 28 24 20 32 36 40 2h (@-40 c) 2h (@+25 c 2h (@+85 c 1h (@-40 c) 1h (@+25 c 1h (@+85 c) figure 8. typical output power and fundamental suppression vs. vdd. output frequency (ghz) pouy (dbm) 5 0 -5 -10 -15 -20 -25 -30 -35 -40 16 44 28 24 20 32 36 40 2h (@4.0v) 2h (@4.5v) 2h (@5.0v) 1h (@4.0v) 1h (@4.5v) 1h (@5.0v) figure 9. typical pout and fundamental suppression vs. vg (fout=38 ghz). pin (dbm) pout (dbm) 10 0 -10 -20 -30 -40 -50 -11 5 -5 -7 -9 -3 -1 1 3 2h (@vg=-1.0) 2h (@vg=-1.2) 2h (@vg=-1.4) 1h (@vg=-1.0) 1h (@vg=-1.2) 1h (@vg=-1.4) AMMC-6140 typical performances (t a = 25 c, v d =4 .5v, i d = 27 ma, vg = -1.2v, z in = z out = 50 ? unless otherwise stated) note: these measurements are in a 50 ? test environment. aspects of the multiplier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity, or low noise ( opt) matching.
4 biasing and operation m/n @ 2fo m/n @ fo s a. diff. amp active balun the frequency doubler mmic consists of a differential ampli- fier circuit that acts as an active balun. the outputs of this balun feed the gates of balanced fets and the drains are connected to form the single-ended output. this results in the fundamental frequency and odd harmonics canceling and the even harmonic drain currents (in phase) adding in superposition. node s acts as a virtual ground. an input matching network (m/n) is designed to provide good match at fundamental frequencies and produces high impedance mis- match at higher harmonics. AMMC-6140 is biased with a single positive drain supply and single negative gate supply using separate bypass capacitors. it is normally biased with the drain supply connected to the v dd bond pad and the gate supply connected to the v gg bond pad. it is important to have the 100 pf bypass capacitor and it should be placed as close to the die as possible. typical bias connec- tions are shown in figure 12. for most of the application it is recommended to use a vg= -1.2v and vd = 4.5v. the AMMC-6140 performance changes very slightly with drain (vd) and gate bias (vg) as shown in figures 8 and 9. minor improvements in performance are possible for output power or fundamental suppression by optimizing the vg from -1.0 v to -1.4v and/or vd from 4.0 to 5.0v. the rf input and output ports are ac coupled, thus no dc voltage is present at either port. however, the rf output port has an internal output matching circuit that presents a dc short. proper care should be taken while biasing a sequential circuit to the AMMC-6140 as it might cause a dc short (use a dc block if sub sequential circuit is not ac coupled). no ground wires are needed since ground connections are made with plated through- holes to the backside of the device. refer to the absolute maximum ratings table for allowed dc and thermal conditions. assembly techniques the backside of the mmic chip is rf ground. for microstrip applications the chip should be attached directly to the ground plane (e.g. circuit carrier or heatsink) using electrically conductive epoxy [1] . for best performance, the topside of the mmic should be brought up to the same height as the circuit surrounding it. this can be accomplished by mounting a gold plate metal shim (same length and width as the mmic) under the chip which is of correct thickness to make the chip and adjacent circuit the same height. the amount of epoxy used for the chip and/or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. the ground plane should be free of any residue that may jeopar- dize electrical or mechanical attachment. the location of the rf bond pads is shown in figure 12. note that all the rf input and output ports are in a ground-signal-ground configuration. rf connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. a single bond wire is normally sufficient for signal connections, however double bonding with 0.7 mil gold wire or use of gold mesh [2] is recommended for best performance, especially near the high end of the frequency band. thermosonic wedge bonding is the preferred method for wire attachment to the bond pads. gold mesh can be attached using a 2 mil round tracking tool and a tool force of approximately 22 grams and a ultrasonic power of roughly 55 db for a duration of 76 8 ms. the guided wedge at an untrasonic power level of 64 db can be used for 0.7 mil wire. the recommended wire bond stage temperature is 150 2 c. caution should be taken to not exceed the absolute maximum rating for assembly temperature and time. the chip is 100 m thick and should be handled with care. this mmic has exposed air bridges on the top surface and should be handled by the edges or with a custom collet (do not pick up the die with a vacuum on die center). this mmic is also static sensitive and esd precautions should be taken. notes: 1. ablebond 84-1 lm1 silver epoxy is recommended. 2. buckbee-mears corporation, st. paul, mn, 800-262-3824
5 rfin rfout figure 10. AMMC-6140 simplified schematic. figure 11. AMMC-6140 bonding pad locations. 900 0 620 rfi 0 0 1300 (dimensions in m) rfo 395 1090 vgg 650 vdd
www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (65) 6756 2394 india, australia, new zealand: (65) 6755 1939 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (65) 6755 2044 taiwan: (65) 6755 1843 data subject to change. copyright ? 2005 agilent technologies, inc. february 21, 2005 5989-2341en 50 ohm rf vg vg 100 pf vd vd rfi 50 ohm figure 12. AMMC-6140 assembly diagram. ordering information AMMC-6140-w10 = 10 devices per tray AMMC-6140-w50 = 50 devices per tray
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